3.10 Holes are being steadily injected into a region of n-type silicon (connected to other devices, the details of which are not important for this question). In the steady state, the excess-hole concentration profile shown in Fig. P3.10 is established in the n-type silicon region. Here “excess” means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted pn0. If ND = 1016/cm3, n i = 1.5×1010/cm3, Dp = 12 cm2/s, and W = 50 nm, find the density of the current that will flow in the x direction.

10 8 - 3.10 Holes are being steadily injected into a region of n-type silicon (connected to other devices, the details of which are not important for this question). In the steady state, the excess-hole concentration profile shown in Fig. P3.10 is established in the n-type silicon region. Here “excess” means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted pn0. If ND = 1016/cm3, n i = 1.5×1010/cm3, Dp = 12 cm2/s, and W = 50 nm, find the density of the current that will flow in the x direction.

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images - 3.10 Holes are being steadily injected into a region of n-type silicon (connected to other devices, the details of which are not important for this question). In the steady state, the excess-hole concentration profile shown in Fig. P3.10 is established in the n-type silicon region. Here “excess” means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted pn0. If ND = 1016/cm3, n i = 1.5×1010/cm3, Dp = 12 cm2/s, and W = 50 nm, find the density of the current that will flow in the x direction.

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