3.22 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. Show that I I p = Aqni2 Dp Lp ND eV/VT −1 For the specific case in which ND = 1017/cm3, Dp = 10 cm2/s, Lp = 10 μm, and A = 104 μm2, find IS and the voltage V obtained when I = 1 mA. Assume operation at 300 K where n i = 1.5×1010/cm3.

22 13 - 3.22 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. Show that I  I p = Aqni2 Dp Lp ND eV/VT −1 For the specific case in which ND = 1017/cm3, Dp = 10 cm2/s, Lp = 10 μm, and A = 104 μm2, find IS and the voltage V obtained when I = 1 mA. Assume operation at 300 K where n i = 1.5×1010/cm3.

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images - 3.22 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. Show that I  I p = Aqni2 Dp Lp ND eV/VT −1 For the specific case in which ND = 1017/cm3, Dp = 10 cm2/s, Lp = 10 μm, and A = 104 μm2, find IS and the voltage V obtained when I = 1 mA. Assume operation at 300 K where n i = 1.5×1010/cm3.

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