3.4 For a silicon crystal doped with phosphorus, what must ND be if at T = 300 K the hole concentration drops below the intrinsic level by a factor of 108?

4 12 - 3.4 For a silicon crystal doped with phosphorus, what must ND be if at T = 300 K the hole concentration drops below the intrinsic level by a factor of 108?

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images - 3.4 For a silicon crystal doped with phosphorus, what must ND be if at T = 300 K the hole concentration drops below the intrinsic level by a factor of 108?

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