3.5 In a phosphorus-doped silicon layer with impurity concentration of 1017/cm3, find the hole and electron concentrations at 27°C and 125°C.

5 12 - 3.5 In a phosphorus-doped silicon layer with impurity concentration of 1017/cm3, find the hole and electron concentrations at 27°C and 125°C.

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images - 3.5 In a phosphorus-doped silicon layer with impurity concentration of 1017/cm3, find the hole and electron concentrations at 27°C and 125°C.

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