3.6 A young designer, aiming to develop intuition concerning conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting bar 10-μm long, 3-μm wide, and 1 μm thick, made of various materials. The designer considers: (a) intrinsic silicon (b) n-doped silicon with ND = 5×1016/cm3 (c) n-doped silicon with ND = 5×1018/cm3 (d) p-doped silicon with NA = 5×1016/cm3 (e) aluminum with resistivity of 2.8 μ·cm Find the resistance in each case. For intrinsic silicon, use the data in Table 3.1. For doped silicon, assume μn = 3μp = 1200 cm2/V ·s. (Recall that R = ρL/A.)

6 13 - 3.6 A young designer, aiming to develop intuition concerning conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting bar 10-μm long, 3-μm wide, and 1 μm thick, made of various materials. The designer considers: (a) intrinsic silicon (b) n-doped silicon with ND = 5×1016/cm3 (c) n-doped silicon with ND = 5×1018/cm3 (d) p-doped silicon with NA = 5×1016/cm3 (e) aluminum with resistivity of 2.8 μ·cm Find the resistance in each case. For intrinsic silicon, use the data in Table 3.1. For doped silicon, assume μn = 3μp = 1200 cm2/V ·s. (Recall that R = ρL/A.)

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images - 3.6 A young designer, aiming to develop intuition concerning conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting bar 10-μm long, 3-μm wide, and 1 μm thick, made of various materials. The designer considers: (a) intrinsic silicon (b) n-doped silicon with ND = 5×1016/cm3 (c) n-doped silicon with ND = 5×1018/cm3 (d) p-doped silicon with NA = 5×1016/cm3 (e) aluminum with resistivity of 2.8 μ·cm Find the resistance in each case. For intrinsic silicon, use the data in Table 3.1. For doped silicon, assume μn = 3μp = 1200 cm2/V ·s. (Recall that R = ρL/A.)

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