5.10 Consider a CMOS process for which Lmin = 0.25 μm, t ox = 6 nm, μn = 460 cm2/V·s, and Vt = 0.5 V. (a) Find Cox and kn. (b) For an NMOS transistor with W/L = 20 μm/0.25 μm, calculate the values of V OV, VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current I D = 0.5 mA. (c) For the device in (b), find the values of VOV and VGS required to cause the device to operate as a 100- resistor for very small vDS.

10 1 - 5.10 Consider a CMOS process for which Lmin = 0.25 μm, t ox = 6 nm, μn = 460 cm2/V·s, and Vt = 0.5 V. (a) Find Cox and kn. (b) For an NMOS transistor with W/L = 20 μm/0.25 μm, calculate the values of V OV, VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current I D = 0.5 mA. (c) For the device in (b), find the values of VOV and VGS required to cause the device to operate as a 100- resistor for very small vDS.

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images - 5.10 Consider a CMOS process for which Lmin = 0.25 μm, t ox = 6 nm, μn = 460 cm2/V·s, and Vt = 0.5 V. (a) Find Cox and kn. (b) For an NMOS transistor with W/L = 20 μm/0.25 μm, calculate the values of V OV, VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current I D = 0.5 mA. (c) For the device in (b), find the values of VOV and VGS required to cause the device to operate as a 100- resistor for very small vDS.

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