5.32 In a particular IC design in which the standard channel length is 1 μm, an NMOS device with W/L of 10 operating at 200 μA is found to have an output resistance of 100 k, about 1 5 of that needed. What dimensional change can be made to solve the problem? What is the new device length? The new device width? The new W/L ratio? What is VA for the standard device in this IC? The new device?