5.34 An NMOS transistor is fabricated in a 0.5-μm process having kn = 200 μA/V2 and VA = 20 V/μm of channel length. If L = 1.5 μm and W = 15 μm, find VA and λ. Find the value of I D that results when the device is operated with an overdrive voltage of 0.5 V and VDS = 2 V. Also, find the value of ro at this operating point. If VDS is increased by 1 V, what is the corresponding change in ID?

34 1 - 5.34 An NMOS transistor is fabricated in a 0.5-μm process having kn = 200 μA/V2 and VA = 20 V/μm of channel length. If L = 1.5 μm and W = 15 μm, find VA and λ. Find the value of I D that results when the device is operated with an overdrive voltage of 0.5 V and VDS = 2 V. Also, find the value of ro at this operating point. If VDS is increased by 1 V, what is the corresponding change in ID?

This content is for Premium members only.
sign up for premium and access unlimited solutions for a month at just 5$(not renewed automatically)


images - 5.34 An NMOS transistor is fabricated in a 0.5-μm process having kn = 200 μA/V2 and VA = 20 V/μm of channel length. If L = 1.5 μm and W = 15 μm, find VA and λ. Find the value of I D that results when the device is operated with an overdrive voltage of 0.5 V and VDS = 2 V. Also, find the value of ro at this operating point. If VDS is increased by 1 V, what is the corresponding change in ID?

already a member please login


9   +   1   =