5.4 An NMOS transistor that is operated with a small vDS is found to exhibit a resistance r DS. By what factor will rDS change in each of the following situations? (a) VOV is doubled. (b) The device is replaced with another fabricated in the same technology but with double the width. (c) The device is replaced with another fabricated in the same technology but with both the width and length doubled. (d) The device is replaced with another fabricated in a more advanced technology for which the oxide thickness is halved and similarly for W and L (assume μn remains unchanged).

4 1 - 5.4 An NMOS transistor that is operated with a small vDS is found to exhibit a resistance r DS. By what factor will rDS change in each of the following situations? (a) VOV is doubled. (b) The device is replaced with another fabricated in the same technology but with double the width. (c) The device is replaced with another fabricated in the same technology but with both the width and length doubled. (d) The device is replaced with another fabricated in a more advanced technology for which the oxide thickness is halved and similarly for W and L (assume μn remains unchanged).

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images - 5.4 An NMOS transistor that is operated with a small vDS is found to exhibit a resistance r DS. By what factor will rDS change in each of the following situations? (a) VOV is doubled. (b) The device is replaced with another fabricated in the same technology but with double the width. (c) The device is replaced with another fabricated in the same technology but with both the width and length doubled. (d) The device is replaced with another fabricated in a more advanced technology for which the oxide thickness is halved and similarly for W and L (assume μn remains unchanged).

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