5.5 An NMOS transistor fabricated in a technology for which k n = 400 μA/V2 and Vt = 0.5 V is required to operate with a small v DS as a variable resistor ranging in value from 250 to 1 k. Specify the range required for the control voltage VGS and the required transistor width W. It is required to use the smallest possible device, as limited by the minimum channel length of this technology (Lmin = 0.18 μm) and the maximum allowed voltage of 1.8 V.

5 1 - 5.5 An NMOS transistor fabricated in a technology for which k n = 400 μA/V2 and Vt = 0.5 V is required to operate with a small v DS as a variable resistor ranging in value from 250  to 1 k. Specify the range required for the control voltage VGS and the required transistor width W. It is required to use the smallest possible device, as limited by the minimum channel length of this technology (Lmin = 0.18 μm) and the maximum allowed voltage of 1.8 V.

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images - 5.5 An NMOS transistor fabricated in a technology for which k n = 400 μA/V2 and Vt = 0.5 V is required to operate with a small v DS as a variable resistor ranging in value from 250  to 1 k. Specify the range required for the control voltage VGS and the required transistor width W. It is required to use the smallest possible device, as limited by the minimum channel length of this technology (Lmin = 0.18 μm) and the maximum allowed voltage of 1.8 V.

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