5.7 An n-channel MOS device in a technology for which oxide thickness is 4 nm, minimum channel length is 0.18 μm, k n = 400 μA/V2, and Vt = 0.5 V operates in the triode region, with small v DS and with the gate–source voltage in the range 0 V to +1.8 V. What device width is needed to ensure that the minimum available resistance is 1 k?

7 1 - 5.7 An n-channel MOS device in a technology for which oxide thickness is 4 nm, minimum channel length is 0.18 μm, k n = 400 μA/V2, and Vt = 0.5 V operates in the triode region, with small v DS and with the gate–source voltage in the range 0 V to +1.8 V. What device width is needed to ensure that the minimum available resistance is 1 k?

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images - 5.7 An n-channel MOS device in a technology for which oxide thickness is 4 nm, minimum channel length is 0.18 μm, k n = 400 μA/V2, and Vt = 0.5 V operates in the triode region, with small v DS and with the gate–source voltage in the range 0 V to +1.8 V. What device width is needed to ensure that the minimum available resistance is 1 k?

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