6.6 In this problem, we contrast two BJT integrated-circuit fabrication technologies: For the “old” technology, a typical npn transistor has I S = 2 × 10 −15 A, and for the “new” technology, a typical npn transistor has I S = 2 × 10 −18 A. These typical devices have vastly different junction areas and base width. For our purpose here we wish to determine the v BE required to establish a collector current of 1 mA in each of the two typical devices. Assume active-mode operation.

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