**7.100 The variability (ID/ID) in the bias current ID due to the variability (Vt/Vt) in the threshold voltage Vt can be evaluated from I D ID = SID Vt VVt t  where SID Vt , the sensitivity of ID relative to Vt, is defined as SID Vt = ∂I D ∂V t Vt ID (a) For the case of a MOSFET biased with a fixed VGS, show that SID Vt = − 2V t V OV and find the variability in ID for Vt = 0.5 V and Vt/Vt = ±5%. Let the MOSFET be biased at V OV = 0.25 V. (b) For the case of aMOSFET biasedwith afixed gate voltage VG and a resistance R S included in the source lead, show that SID Vt = − 2V t V OV +2IDRS For the same parameters given in (a), find the required value of (IDRS) and VG to limit ID/ID to ±5%. What value of R S is needed if ID is 100 μA?

100 7 - **7.100 The variability (ID/ID) in the bias current ID due to the variability (Vt/Vt) in the threshold voltage Vt can be evaluated from I D ID = SID Vt VVt t  where SID Vt , the sensitivity of ID relative to Vt, is defined as SID Vt = ∂I D ∂V t Vt ID (a) For the case of a MOSFET biased with a fixed VGS, show that SID Vt = − 2V t V OV and find the variability in ID for Vt = 0.5 V and Vt/Vt = ±5%. Let the MOSFET be biased at V OV = 0.25 V. (b) For the case of aMOSFET biasedwith afixed gate voltage VG and a resistance R S included in the source lead, show that SID Vt = − 2V t V OV +2IDRS For the same parameters given in (a), find the required value of (IDRS) and VG to limit ID/ID to ±5%. What value of R S is needed if ID is 100 μA?

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images - **7.100 The variability (ID/ID) in the bias current ID due to the variability (Vt/Vt) in the threshold voltage Vt can be evaluated from I D ID = SID Vt VVt t  where SID Vt , the sensitivity of ID relative to Vt, is defined as SID Vt = ∂I D ∂V t Vt ID (a) For the case of a MOSFET biased with a fixed VGS, show that SID Vt = − 2V t V OV and find the variability in ID for Vt = 0.5 V and Vt/Vt = ±5%. Let the MOSFET be biased at V OV = 0.25 V. (b) For the case of aMOSFET biasedwith afixed gate voltage VG and a resistance R S included in the source lead, show that SID Vt = − 2V t V OV +2IDRS For the same parameters given in (a), find the required value of (IDRS) and VG to limit ID/ID to ±5%. What value of R S is needed if ID is 100 μA?

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