*7.110 Utilizing ±3-V power supplies, it is required to design a version of the circuit in Fig. 7.53 in which the signal will be coupled to the emitter and thus RB can be set to zero. Find values for R E and RC so that a dc emitter current of 0.4 mA is obtained and so that the gain is maximized while allowing ±1 V of signal swing at the collector. If temperature increases from the nominal value of 25°C to 125°C, estimate the percentage change in collector bias current. In addition to the –2 mV/°C change in VBE, assume that the transistor β changes over this temperature range from 50 to 150

110 - *7.110 Utilizing ±3-V power supplies, it is required to design a version of the circuit in Fig. 7.53 in which the signal will be coupled to the emitter and thus RB can be set to zero. Find values for R E and RC so that a dc emitter current of 0.4 mA is obtained and so that the gain is maximized while allowing ±1 V of signal swing at the collector. If temperature increases from the nominal value of 25°C to 125°C, estimate the percentage change in collector bias current. In addition to the –2 mV/°C change in VBE, assume that the transistor β changes over this temperature range from 50 to 150

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images - *7.110 Utilizing ±3-V power supplies, it is required to design a version of the circuit in Fig. 7.53 in which the signal will be coupled to the emitter and thus RB can be set to zero. Find values for R E and RC so that a dc emitter current of 0.4 mA is obtained and so that the gain is maximized while allowing ±1 V of signal swing at the collector. If temperature increases from the nominal value of 25°C to 125°C, estimate the percentage change in collector bias current. In addition to the –2 mV/°C change in VBE, assume that the transistor β changes over this temperature range from 50 to 150

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