7.32 For a 0.18-μm CMOS fabrication process: Vtn = 0.5 V, V tp = –0.5 V, μnCox = 400 μA/V2, μpCox = 100 μA/V2, C ox = 8.6 fF/μm2, VA (n-channel devices) = 5L (μm), and VA (p-channel devices) = 6L (μm). Find the small-signal model parameters (gm and ro) for both an NMOS and a PMOS transistor having W/L = 10 μm/0.5 μm and operating at ID = 100 μA. Also, find the overdrive voltage at which each device must be operating

32 11 - 7.32 For a 0.18-μm CMOS fabrication process: Vtn = 0.5 V, V tp = –0.5 V, μnCox = 400 μA/V2, μpCox = 100 μA/V2, C ox = 8.6 fF/μm2, VA (n-channel devices) = 5L (μm), and VA (p-channel devices) = 6L (μm). Find the small-signal model parameters (gm and ro) for both an NMOS and a PMOS transistor having W/L = 10 μm/0.5 μm and operating at ID = 100 μA. Also, find the overdrive voltage at which each device must be operating

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images - 7.32 For a 0.18-μm CMOS fabrication process: Vtn = 0.5 V, V tp = –0.5 V, μnCox = 400 μA/V2, μpCox = 100 μA/V2, C ox = 8.6 fF/μm2, VA (n-channel devices) = 5L (μm), and VA (p-channel devices) = 6L (μm). Find the small-signal model parameters (gm and ro) for both an NMOS and a PMOS transistor having W/L = 10 μm/0.5 μm and operating at ID = 100 μA. Also, find the overdrive voltage at which each device must be operating

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