A piece of silicon sample has a resistivity of 0.1 Ohm.cm. Its thickness is 100 mum. The electron mobility is 1350cm^2v^-1 sec^-1. When a magnetic field of B_z and an I_x of 1mA is supplied, the Hall voltage is found out to be -70 muV. Calculate the electron concentration (#/cm^3 or #/m^3) of the silicon sample and B_z (in Wb/m^2). Suppose the concentration of holes can be neglected

79 4 - A piece of silicon sample has a resistivity of 0.1 Ohm.cm. Its thickness is 100 mum. The electron mobility is 1350cm^2v^-1 sec^-1. When a magnetic field of B_z and an I_x of 1mA is supplied, the Hall voltage is found out to be -70 muV. Calculate the electron concentration (#/cm^3 or #/m^3) of the silicon sample and B_z (in Wb/m^2). Suppose the concentration of holes can be neglected

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images - A piece of silicon sample has a resistivity of 0.1 Ohm.cm. Its thickness is 100 mum. The electron mobility is 1350cm^2v^-1 sec^-1. When a magnetic field of B_z and an I_x of 1mA is supplied, the Hall voltage is found out to be -70 muV. Calculate the electron concentration (#/cm^3 or #/m^3) of the silicon sample and B_z (in Wb/m^2). Suppose the concentration of holes can be neglected

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