A PMOS transistor having parameters saturation for a 200 μA drain current. a. (3+2 pts) Find the minimum source-to-drain voltage vsD required to be in saturation for 4, 200 μA drain current. (2+3 pts) Find the source-to-gate voltage VSG value for 200 μΑ drain current. (3+2 pts) Find the value of kplfW-4 μm and L-500 nm. b, c,

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