(a) The time taken for electrons to diffuse through a layer of p-type silicon is 28.8 ns. If the minority carrier diffusion coefficient is 3.4 × 10−3 m2 s−1, deter- mine the thickness of the silicon layer. (b) Assuming the depletion layer width in a silicon photodiode corresponds to the layer thickness obtained in part (a) and that the maximum response time of the photodiode is 877 ps, estimate the carrier (hole) drift velocity.

(a) The time taken for electrons to diffuse through a layer of p-type silicon is 28.8 ns. If the minority carrier diffusion coefficient is 3.4 × 10−3 m2 s−1, deter- mine the thickness of the silicon layer.

(b) Assuming the depletion layer width in a silicon photodiode corresponds to the layer thickness obtained in part (a) and that the maximum response time of the photodiode is 877 ps, estimate the carrier (hole) drift velocity.

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