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Category: microelectronics by sedra and smith

Category: microelectronics by sedra and smith

4. The transistor in this circuit have. Find for each of the following cases:

4. The transistor in this circuit have. Find for each of the following cases:

3. This MOSFET has . The Early effect can be neglected.

3. This MOSFET has . The Early effect can be neglected.

2. This NMOS transistor has . Neglect the Early effect.

2. This NMOS transistor has . Neglect the Early effect.

1. The figure above shows a capacitively coupled amplifier. In the following, assume operation at midband frequecies where the coupling and bypass capacitors behave as short circuits. The BJT has and the Early effect can be neglected. For this problem, calculate all value to 2 decimals places of accuracy rather than using resistances from appendix J.

1. The figure above shows a capacitively coupled amplifier. In the following, assume operation at midband frequecies where the coupling and bypass capacitors behave as short circuits. The BJT has and the Early effect can be neglected. For this problem, calculate all value to 2 decimals places of accuracy rather than using resistances from appendix J.

Q1. The following parameters are given: DC Analysis , AC Analysis The goal is to calculate the feedback d. Identify the topology that can use. e. Find R1, R2, and B from the B-circuit for the topology you identify. f. Draw the small-signal circuit and find the proper gain for your topology.

Q1. The following parameters are given: DC Analysis , AC Analysis The goal is to calculate the feedback d. Identify the topology that can use. e. Find R1, R2, and B from the B-circuit for the topology you identify. f. Draw the small-signal circuit and find the proper gain for your topology.

Q. The following parameters are given: DC Analysis , AC Analysis

Q. The following parameters are given: DC Analysis , AC Analysis

10.108 In each of the six circuits in Fig. P10.108, letβ = 100, Cμ = 2 pF, and fT = 400 MHz, and neglect rx andro. Calculate the midband gain AM and the 3-dB frequency fH

10.108 In each of the six circuits in Fig. P10.108, letβ = 100, Cμ = 2 pF, and fT = 400 MHz, and neglect rx andro. Calculate the midband gain AM and the 3-dB frequency fH

10.107 Consider the BiCMOS amplifier shown inFig. P10.107. The BJT hasVBE= 0.7 V, β = 200,Cμ = 0.8 pF, and fT = 600 MHz. The NMOS transistor hasVt = 1 V, k

10.107 Consider the BiCMOS amplifier shown inFig. P10.107. The BJT hasVBE= 0.7 V, β = 200,Cμ = 0.8 pF, and fT = 600 MHz. The NMOS transistor hasVt = 1 V, k

*10.106 Figure P10.106 shows an amplifier formed bycascading two CS stages. Note that the input bias voltageis not shown. Each of Q1 and Q2 is operated at an overdrivevoltage of 0.2 V, andVA= 10 V. The transistor capacitancesare as follows: Cgs = 20 fF, Cgd = 5 fF, and Cd b = 5 fF. Thesignal-source resistance Rsig = 10 k.(a) Find the dc voltage gain.(b) Use the method of open-circuit time constants todetermine an estimate for the 3-dB frequency fH

*10.106 Figure P10.106 shows an amplifier formed bycascading two CS stages. Note that the input bias voltageis not shown. Each of Q1 and Q2 is operated at an overdrivevoltage of 0.2 V, andVA= 10 V. The transistor capacitancesare as follows: Cgs = 20 fF, Cgd = 5 fF, and Cd b = 5 fF. Thesignal-source resistance Rsig = 10 k.(a) Find the dc voltage gain.(b) Use the method of open-circuit time constants todetermine an estimate for the 3-dB frequency fH

10.105 This problem investigates the use of MOSFETsin the design of wideband amplifiers (Steininger, 1990). Suchamplifiers can be realized by cascading low-gain stages.(a) Show that for the case Cgd Cgs and the gain ofthe common-source amplifier is low so that the Millereffect is negligible, the MOSFET can be modeled by theapproximate equivalent circuit shown in Fig. P10.105(a),where ωT is the unity-gain frequency of the MOSFET.

10.105 This problem investigates the use of MOSFETsin the design of wideband amplifiers (Steininger, 1990). Suchamplifiers can be realized by cascading low-gain stages.(a) Show that for the case Cgd Cgs and the gain ofthe common-source amplifier is low so that the Millereffect is negligible, the MOSFET can be modeled by theapproximate equivalent circuit shown in Fig. P10.105(a),where ωT is the unity-gain frequency of the MOSFET.

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