D 8.2 Using VDD = 1.8 V and a pair of matched MOSFETs, design the current-source circuit of Fig. 8.1 to provide an output current of 150-μA nominal value. To simplify matters, assume that the nominal value of the output current is obtained at V O  VGS. It is further required that the circuit operate for VO in the range of 0.3 V to VDD and that the change in IO over this range be limited to 10% of the nominal value of IO . Find the required value of R and the device dimensions. For the fabrication-process technology utilized, μnCox = 400 μA/V2, VA = 10 V/μm, and Vt = 0.5 V.

8.2 - D 8.2 Using VDD = 1.8 V and a pair of matched MOSFETs, design the current-source circuit of Fig. 8.1 to provide an output current of 150-μA nominal value. To simplify matters, assume that the nominal value of the output current is obtained at V O  VGS. It is further required that the circuit operate for VO in the range of 0.3 V to VDD and that the change in IO over this range be limited to 10% of the nominal value of IO . Find the required value of R and the device dimensions. For the fabrication-process technology utilized, μnCox = 400 μA/V2, VA = 10 V/μm, and Vt = 0.5 V.

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images - D 8.2 Using VDD = 1.8 V and a pair of matched MOSFETs, design the current-source circuit of Fig. 8.1 to provide an output current of 150-μA nominal value. To simplify matters, assume that the nominal value of the output current is obtained at V O  VGS. It is further required that the circuit operate for VO in the range of 0.3 V to VDD and that the change in IO over this range be limited to 10% of the nominal value of IO . Find the required value of R and the device dimensions. For the fabrication-process technology utilized, μnCox = 400 μA/V2, VA = 10 V/μm, and Vt = 0.5 V.

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