D 8.37 An NMOS transistor is fabricated in the 0.18-μm process whose parameters are given in Table J.1 in Appendix J. The device has a channel length twice the minimum and is operated at VOV = 0.25 V and ID = 10 μA. (a) What values of gm, ro, and A0 are obtained? (b) If ID is increased to 100 μA, what do VOV, gm, ro, and A0 become? (c) If the device is redesigned with a new value of W so that it operates at VOV = 0.25 V for ID = 100 μA, what do gm, ro , and A0 become? (d) If the redesigned device in (c) is operated at 10 μA, find V OV, gm, ro, and A0. (e) Which designs and operating conditions produce the lowest and highest values of A0? What are these values? In each of these two cases, if W/L is held at the same value but L is made 10 times larger, what gains result?

8.37 - D 8.37 An NMOS transistor is fabricated in the 0.18-μm process whose parameters are given in Table J.1 in Appendix J. The device has a channel length twice the minimum and is operated at VOV = 0.25 V and ID = 10 μA. (a) What values of gm, ro, and A0 are obtained? (b) If ID is increased to 100 μA, what do VOV, gm, ro, and A0 become? (c) If the device is redesigned with a new value of W so that it operates at VOV = 0.25 V for ID = 100 μA, what do gm, ro , and A0 become? (d) If the redesigned device in (c) is operated at 10 μA, find V OV, gm, ro, and A0. (e) Which designs and operating conditions produce the lowest and highest values of A0? What are these values? In each of these two cases, if W/L is held at the same value but L is made 10 times larger, what gains result?

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images - D 8.37 An NMOS transistor is fabricated in the 0.18-μm process whose parameters are given in Table J.1 in Appendix J. The device has a channel length twice the minimum and is operated at VOV = 0.25 V and ID = 10 μA. (a) What values of gm, ro, and A0 are obtained? (b) If ID is increased to 100 μA, what do VOV, gm, ro, and A0 become? (c) If the device is redesigned with a new value of W so that it operates at VOV = 0.25 V for ID = 100 μA, what do gm, ro , and A0 become? (d) If the redesigned device in (c) is operated at 10 μA, find V OV, gm, ro, and A0. (e) Which designs and operating conditions produce the lowest and highest values of A0? What are these values? In each of these two cases, if W/L is held at the same value but L is made 10 times larger, what gains result?

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