D 8.40 The circuit in Fig. 8.15(a) isfabricated in a processfor which μnCox = 2μpCox = 200 μA/V2, VAn =  VAp  =20 V/μm, V tn = −Vtp = 0.5 V, and VDD = 2.5 V. The two transistors have L = 0.5 μm and are to be operated at ID = 100 μA and |VOV| = 0.3 V. Find the required values of VG, (W/L)1, (W/L)2, and Av.

8.40 - D 8.40 The circuit in Fig. 8.15(a) isfabricated in a processfor which μnCox = 2μpCox = 200 μA/V2, VAn  =  VAp   =20 V/μm, V tn = −Vtp = 0.5 V, and VDD = 2.5 V. The two transistors have L = 0.5 μm and are to be operated at ID = 100 μA and |VOV| = 0.3 V. Find the required values of VG, (W/L)1, (W/L)2, and Av.

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images - D 8.40 The circuit in Fig. 8.15(a) isfabricated in a processfor which μnCox = 2μpCox = 200 μA/V2, VAn  =  VAp   =20 V/μm, V tn = −Vtp = 0.5 V, and VDD = 2.5 V. The two transistors have L = 0.5 μm and are to be operated at ID = 100 μA and |VOV| = 0.3 V. Find the required values of VG, (W/L)1, (W/L)2, and Av.

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