D 8.67 Design the CMOS cascode amplifier in Fig. 8.33 for the following specifications: gm1 = 1 mA/V and Av = −280 V/V. Assume that for the available fabrication process,  V A  = 5 V/μm for both NMOS and PMOS devices and that μnCox = 4 μpCox = 400 μA/V2. Use the same channel length L for all devices and operate all four devices at  VOV  = 0.25 V. Determine the required channel length L, the bias current I, and the W/L ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the W/L ratios.

8.67 - D 8.67 Design the CMOS cascode amplifier in Fig. 8.33 for the following specifications: gm1 = 1 mA/V and Av = −280 V/V. Assume that for the available fabrication process,  V  A  = 5 V/μm for both NMOS and PMOS devices and that μnCox = 4 μpCox = 400 μA/V2. Use the same channel length L for all devices and operate all four devices at  VOV  = 0.25 V. Determine the required channel length L, the bias current I, and the W/L ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the W/L ratios.

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images - D 8.67 Design the CMOS cascode amplifier in Fig. 8.33 for the following specifications: gm1 = 1 mA/V and Av = −280 V/V. Assume that for the available fabrication process,  V  A  = 5 V/μm for both NMOS and PMOS devices and that μnCox = 4 μpCox = 400 μA/V2. Use the same channel length L for all devices and operate all four devices at  VOV  = 0.25 V. Determine the required channel length L, the bias current I, and the W/L ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the W/L ratios.

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